Proceedings of the RHSAS

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Monte Carlo simulation of photoelectric characteristics of 2D IR FPA detectors

Issue No 4 (37) October - December 2017
Authors:

Polovinkin Vladimir Grigor’evich,
Stuchinsky Victor Andreevich,
Vishnyakov Aleksey Vitalievich,
Lee Irlam Ignat’evich
DOI: http://dx.doi.org/10.17212/1727-2769-2017-4-91-100
Abstract

In the present paper, we report on the results of Monte Carlo calculations of spatial distributions of the local quantum efficiency in CdHgTe photovoltaic IR FPA detectors at their backside illumination with incident radiation.  The obtained spatial distributions of local quantum efficiency allow one to calculate the values of the integral quantum efficiency of the detectors under their uniform and local illumination with radiation. Based on these distributions it is possible to predict the sensitivity and modulation transfer characteristics of detectors, with their main photoelectric and design parameters being taken into account.


Keywords: IR focal plane array IR FPA, photodiode, local quantum efficiency, charge carrier (CC), spatial resolution

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For citation:

Polovinkin V.G., Stuchinsky V.A., Vishnyakov A.V., Lee I.I. Modelirovanie fotoelektricheskikh kharakteristik matrichnykh IK fotopriemnikov metodom Monte-Karlo [Monte Carlo simulation of photoelectric characteristics of 2D IR FPA detectors]. Doklady Akademii nauk vysshei shkoly Rossiiskoi Federatsii – Proceedings of the Russian higher school Academy of sciences, 2017, no. 4 (37), pp. 91–100. doi: 10.17212/1727-2769-2017-4-91-100

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